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Special seminar by Dr. Michael Nolan
8 August @ 8:00 am - 5:00 pm
Save the date! OCAMM presents a special seminar by Dr. Michael Nolan from the Tyndall National Institute, Ireland on ab initio atomistic simulation of the chemical processes involved in atomic layer processing, such as atomic layer deposition (ALD) and atomic layer etching (ALE). This invited seminar will take place at the Department of Chemistry and Materials Science, Aalto University on 9 August 2024 @ 9:30 in lecture hall A304 (Ke2) at the main building of the School of Chemical Engineering in the Otaniemi campus, Kemistintie 1, 02150 Espoo. The seminar is open to all. Please join us in Otaniemi to learn more about how you can simulate the growth (and destruction!) of materials one atomic layer at a time!
Title
First Principles Simulations of Atomic Level Processing
Abstract
Atomic level processing allowed for deposition and etch of materials on complex substrates giving a high level of control over conformality and uniformity. In this seminar I will discuss how first principles simulations provide insights into a range of process chemistries. This includes atomic layer etching of high-k oxides, deposition of hybrid organic-inorganic materials and plasma deposition of metals.
About the speaker
Dr. Michael Nolan is head of the Materials Modelling for Devices group at the Tyndall National Institute in Cork, Ireland, whose aim is “to understand and predict how devices work, by research based on modelling materials at the atomic scale”. The applied focus areas are, among others, electronics, solar energy conversion, atomic-layer processing of materials, and surface-based heterogeneous catalysis. Dr. Nolan carries out his modeling work in close collaboration with experimental groups and industry.